PART |
Description |
Maker |
MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|
RU3050L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
STP180N55F3 |
This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology whic
|
ST Microelectronics, Inc.
|
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
|
BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
BUL53BSMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|